NVGS5120P MOSFET. Datasheet pdf. Equivalent
Type Designator: NVGS5120P
Marking Code: VP6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.1 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18.1 nC
Rise Time (tr): 4.9 nS
Drain-Source Capacitance (Cd): 72 pF
Maximum Drain-Source On-State Resistance (Rds): 0.111 Ohm
Package: TSOP-6
NVGS5120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVGS5120P Datasheet (PDF)
1.1. nvgs5120p.pdf 
Size:108K _update_mosfet
NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features • 60 V BVds, Low RDS(on) in TSOP-6 Package • 4.5 V Gate Rating http://onsemi.com • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb-Free Device 111 mW @ -10 V -
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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