All MOSFET. NVGS5120P Datasheet

 

NVGS5120P MOSFET. Datasheet pdf. Equivalent

Type Designator: NVGS5120P

Marking Code: VP6

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18.1 nC

Rise Time (tr): 4.9 nS

Drain-Source Capacitance (Cd): 72 pF

Maximum Drain-Source On-State Resistance (Rds): 0.111 Ohm

Package: TSOP-6

NVGS5120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVGS5120P Datasheet (PDF)

1.1. nvgs5120p.pdf Size:108K _update_mosfet

NVGS5120P
NVGS5120P

NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features • 60 V BVds, Low RDS(on) in TSOP-6 Package • 4.5 V Gate Rating http://onsemi.com • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb-Free Device 111 mW @ -10 V -

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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