NVGS5120P Datasheet. Specs and Replacement
Type Designator: NVGS5120P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.9 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.111 Ohm
Package: TSOP-6
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NVGS5120P substitution
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NVGS5120P datasheet
nvgs5120p.pdf
NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Rating http //onsemi.com NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 111 mW @ -10 V -... See More ⇒
ntgs5120p nvgs5120p.pdf
NTGS5120P, NVGS5120P MOSFET Power, Single, P-Channel, TSOP-6 -60 V, -2.9 A Features http //onsemi.com 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Rating NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 111 mW @ -10 V PPAP Capable -60 V -2.9 A 142 mW @ -4... See More ⇒
Detailed specifications: NVF5P03, NVF6P02, NVGS3130N, NVGS3136P, NVGS3441, NVGS3443, NVGS4111P, NVGS4141N, IRFP260N, NVJD4152P, NVJD4158C, NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ
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