All MOSFET. NVGS5120P Datasheet

 

NVGS5120P MOSFET. Datasheet pdf. Equivalent

Type Designator: NVGS5120P

Marking Code: VP6

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18.1 nC

Rise Time (tr): 4.9 nS

Drain-Source Capacitance (Cd): 72 pF

Maximum Drain-Source On-State Resistance (Rds): 0.111 Ohm

Package: TSOP-6

NVGS5120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVGS5120P Datasheet (PDF)

1.1. nvgs5120p.pdf Size:108K _update_mosfet

NVGS5120P
NVGS5120P

NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features • 60 V BVds, Low RDS(on) in TSOP-6 Package • 4.5 V Gate Rating http://onsemi.com • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb-Free Device 111 mW @ -10 V -

1.2. nvgs5120p.pdf Size:108K _onsemi

NVGS5120P
NVGS5120P

NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features • 60 V BVds, Low RDS(on) in TSOP-6 Package • 4.5 V Gate Rating http://onsemi.com • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb-Free Device 111 mW @ -10 V -

 

Datasheet: NVF5P03 , NVF6P02 , NVGS3130N , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , IRF1404 , NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ .

 

 
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