PH16030L Datasheet and Replacement
Type Designator: PH16030L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0169 Ohm
Package: LFPAK
PH16030L substitution
PH16030L Datasheet (PDF)
ph16030l.pdf

PH16030LN-channel TrenchMOS logic level FETRev. 01 24 February 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Low thermal resistance SO8 equivalent area footprint Low gate charge.1.3 Applications D
Datasheet: PDM6UT20V08E , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL , IRF630 , PH1730AL , PH1825AL , PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL .
History: IXFL44N100P | NTMFS5832NLT1G | AP3A010MT | RSS105N03FU6TB | DMT6016LPS | NTD4965N-1G | OSG60R380IF
Keywords - PH16030L MOSFET datasheet
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History: IXFL44N100P | NTMFS5832NLT1G | AP3A010MT | RSS105N03FU6TB | DMT6016LPS | NTD4965N-1G | OSG60R380IF



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