All MOSFET. PH16030L Datasheet

 

PH16030L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH16030L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41.6 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.2 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0169 Ohm

Package: LFPAK

PH16030L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH16030L Datasheet (PDF)

1.1. ph16030l.pdf Size:89K _update_mosfet

PH16030L
PH16030L

PH16030L N-channel TrenchMOS™ logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Low thermal resistance SO8 equivalent area footprint Low gate charge. 1.3 Applications D

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