All MOSFET. PH16030L Datasheet

 

PH16030L Datasheet and Replacement


   Type Designator: PH16030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0169 Ohm
   Package: LFPAK
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PH16030L Datasheet (PDF)

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PH16030L

PH16030LN-channel TrenchMOS logic level FETRev. 01 24 February 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Low thermal resistance SO8 equivalent area footprint Low gate charge.1.3 Applications D

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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

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