PH1930AL Datasheet. Specs and Replacement

Type Designator: PH1930AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 857 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: LFPAK

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PH1930AL datasheet

 ..1. Size:235K  philips
 ph1930al.pdf pdf_icon

PH1930AL

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due... See More ⇒

 ..2. Size:235K  nxp
 ph1930al.pdf pdf_icon

PH1930AL

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due... See More ⇒

Detailed specifications: PDNM8TP20V7E, PDPM6N20V3, PH1225AL, PH1330AL, PH16030L, PH1730AL, PH1825AL, PH1875L, 8205A, PH1955L, PH20100S, PH2525L, PH2530AL, PH2625L, PH3030AL, PH3230S, PH3330L

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