All MOSFET. PH1930AL Datasheet

 

PH1930AL Datasheet and Replacement


   Type Designator: PH1930AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 857 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: LFPAK
 

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PH1930AL Datasheet (PDF)

 ..1. Size:235K  philips
 ph1930al.pdf pdf_icon

PH1930AL

PH1930ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 ..2. Size:235K  nxp
 ph1930al.pdf pdf_icon

PH1930AL

PH1930ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

Datasheet: PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , P55NF06 , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L .

History: CHM6503GP | STD40NF03L | AP3A010MT | NCE6012CS | RJM0603JSC | AP4800BGM-HF | LNB10R040W3

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