All MOSFET. PH1930AL Datasheet

 

PH1930AL MOSFET. Datasheet pdf. Equivalent

Type Designator: PH1930AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 97 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 64 nC

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 857 pF

Maximum Drain-Source On-State Resistance (Rds): 0.002 Ohm

Package: LFPAK

PH1930AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH1930AL Datasheet (PDF)

1.1. ph1930al.pdf Size:235K _update_mosfet

PH1930AL
PH1930AL

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

1.2. ph1930al.pdf Size:235K _philips

PH1930AL
PH1930AL

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to l

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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