PH1930AL Datasheet and Replacement
Type Designator: PH1930AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 857 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: LFPAK
PH1930AL substitution
PH1930AL Datasheet (PDF)
ph1930al.pdf
PH1930ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph1930al.pdf
PH1930ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Datasheet: PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , P55NF06 , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L .
History: IRF340 | BUK7215-55A
Keywords - PH1930AL MOSFET datasheet
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History: IRF340 | BUK7215-55A
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