PH1955L Datasheet and Replacement
Type Designator: PH1955L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 217 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0173 Ohm
Package: LFPAK
PH1955L substitution
PH1955L Datasheet (PDF)
ph1955l.pdf
PH1955LN-channel TrenchMOS logic level FETRev. 02 25 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
ph1955l.pdf
PH1955LN-channel TrenchMOS logic level FETRev. 02 25 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
Datasheet: PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , IRFB4227 , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL .
History: STH65N05FI
Keywords - PH1955L MOSFET datasheet
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History: STH65N05FI
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