All MOSFET. PH1955L Datasheet

 

PH1955L Datasheet and Replacement


   Type Designator: PH1955L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0173 Ohm
   Package: LFPAK
 

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PH1955L Datasheet (PDF)

 ..1. Size:159K  philips
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PH1955L

PH1955LN-channel TrenchMOS logic level FETRev. 02 25 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

 ..2. Size:159K  nxp
 ph1955l.pdf pdf_icon

PH1955L

PH1955LN-channel TrenchMOS logic level FETRev. 02 25 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , IRFB4227 , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL .

History: IRF5210PBF | TPNTJD4105CT1G | SSM3J314T | AP9587GJ-HF | HM60N03 | IPB60R099CP

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