All MOSFET. PH1955L Datasheet

 

PH1955L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH1955L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 180 nS

Drain-Source Capacitance (Cd): 217 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0173 Ohm

Package: LFPAK

PH1955L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH1955L Datasheet (PDF)

1.1. ph1955l.pdf Size:159K _update_mosfet

PH1955L PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 — 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a

1.2. ph1955l.pdf Size:159K _philips

PH1955L PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and be

 

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