PH1955L Datasheet. Specs and Replacement

Type Designator: PH1955L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 217 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0173 Ohm

Package: LFPAK

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PH1955L datasheet

 ..1. Size:159K  philips
 ph1955l.pdf pdf_icon

PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

 ..2. Size:159K  nxp
 ph1955l.pdf pdf_icon

PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

Detailed specifications: PDPM6N20V3, PH1225AL, PH1330AL, PH16030L, PH1730AL, PH1825AL, PH1875L, PH1930AL, IRF3710, PH20100S, PH2525L, PH2530AL, PH2625L, PH3030AL, PH3230S, PH3330L, PH3430AL

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