PH3030AL Datasheet and Replacement
Type Designator: PH3030AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 81 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 615 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: LFPAK
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PH3030AL Datasheet (PDF)
ph3030al.pdf
PH3030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph3030al.pdf
PH3030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IRFI7536G | WMM11N80M3
Keywords - PH3030AL MOSFET datasheet
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History: FDMS9620S | IRFI7536G | WMM11N80M3
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