PH3030AL Datasheet and Replacement
Type Designator: PH3030AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 81 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 615 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: LFPAK
PH3030AL substitution
PH3030AL Datasheet (PDF)
ph3030al.pdf
PH3030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph3030al.pdf
PH3030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Datasheet: PH1825AL , PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , IRF630 , PH3230S , PH3330L , PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L .
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