All MOSFET. PH3030AL Datasheet

 

PH3030AL MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3030AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 81 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45.8 nC

Rise Time (tr): 58 nS

Drain-Source Capacitance (Cd): 615 pF

Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm

Package: LFPAK

PH3030AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH3030AL Datasheet (PDF)

1.1. ph3030al.pdf Size:235K _update_mosfet

PH3030AL
PH3030AL

PH3030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

1.2. ph3030al.pdf Size:235K _philips

PH3030AL
PH3030AL

PH3030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to l

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top