All MOSFET. PH3330L Datasheet

 

PH3330L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3330L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30.5 nC

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 960 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm

Package: LFPAK

PH3330L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH3330L Datasheet (PDF)

1.1. ph3330l.pdf Size:194K _update_mosfet

PH3330L PH3330L

PH3330L N-channel TrenchMOS logic level FET Rev. 02 — 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an

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