PH3330L MOSFET. Datasheet pdf. Equivalent
Type Designator: PH3330L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30.5 nC
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 960 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm
Package: LFPAK
PH3330L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH3330L Datasheet (PDF)
1.1. ph3330l.pdf 
Size:194K _update_mosfet
PH3330L N-channel TrenchMOS logic level FET Rev. 02 — 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
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