PH3330L Datasheet. Specs and Replacement

Type Designator: PH3330L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: LFPAK

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PH3330L datasheet

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PH3330L

PH3330L N-channel TrenchMOS logic level FET Rev. 02 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an... See More ⇒

Detailed specifications: PH1930AL, PH1955L, PH20100S, PH2525L, PH2530AL, PH2625L, PH3030AL, PH3230S, IRF630, PH3430AL, PH3830L, PH3855L, PH4025L, PH4030AL, PH4330L, PH4530L, PH4830L

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