PH3330L Datasheet and Replacement
Type Designator: PH3330L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 960 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: LFPAK
PH3330L Datasheet (PDF)
ph3330l.pdf

PH3330LN-channel TrenchMOS logic level FETRev. 02 22 October 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features an
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ183 | AOT428 | DH100P18E | DMP3010LPS | STF12N65M5 | HM2300D
Keywords - PH3330L MOSFET datasheet
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History: 2SJ183 | AOT428 | DH100P18E | DMP3010LPS | STF12N65M5 | HM2300D



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