PH3330L Specs and Replacement
Type Designator: PH3330L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 960 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: LFPAK
PH3330L substitution
PH3330L Specs
ph3330l.pdf
PH3330L N-channel TrenchMOS logic level FET Rev. 02 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an... See More ⇒
Detailed specifications: PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , IRFP250N , PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L .
History: QM2409G
Keywords - PH3330L MOSFET specs
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