All MOSFET. PH3330L Datasheet

 

PH3330L Datasheet and Replacement


   Type Designator: PH3330L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: LFPAK
 

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PH3330L Datasheet (PDF)

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PH3330L

PH3330LN-channel TrenchMOS logic level FETRev. 02 22 October 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features an

Datasheet: PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , AON7408 , PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L .

History: QM4302D | MMN3400 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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