All MOSFET. PH3330L Datasheet

 

PH3330L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3330L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30.5 nC

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 960 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm

Package: LFPAK

PH3330L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH3330L Datasheet (PDF)

1.1. ph3330l.pdf Size:194K _update_mosfet

PH3330L
PH3330L

PH3330L N-channel TrenchMOS logic level FET Rev. 02 — 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top

 


PH3330L
  PH3330L
  PH3330L
 

social 

LIST

Last Update

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |

 

 

 
Back to Top