PHP130N03LT Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor PHP130N03LT, PHB130N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 6 m (VGS = 5 V)g Low thermal resistance

Philips Semiconductors Product specification TrenchMOS transistor PHP130N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state

Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 13.7 Ag Low thermal resistanceRDS(ON) 0.35 sGENERAL DESCRIPTION