All MOSFET. PHP130N03LT Equivalents Search

Philips Semiconductors Product specification TrenchMOS transistor PHP130N03LT, PHB130N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 6 m (VGS = 5 V) g Low thermal resistance... See More ⇒

Philips Semiconductors Product specification TrenchMOS transistor PHP130N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state... See More ⇒

Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 13.7 A g Low thermal resistance RDS(ON) 0.35 s GENERAL DESCRIPTION ... See More ⇒