QM03N65D Datasheet and Replacement
Type Designator: QM03N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18.2 nS
Cossⓘ - Output Capacitance: 38.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-252
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QM03N65D Datasheet (PDF)
qm03n65d.pdf

QM03N65D 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM03N65D is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65D mee
qm03n65f.pdf

QM03N65F 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM03N65F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65F mee
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: 2SK3192 | FQD4N25TM



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