All MOSFET. QM10N60F Datasheet


QM10N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: QM10N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 46 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO-220F

QM10N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search


QM10N60F Datasheet (PDF)

0.1. qm10n60f.pdf Size:322K _ubiq


QM10N60F 機密 第 1 頁 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM10N60F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


Back to Top