QM10N60F Datasheet and Replacement
Type Designator: QM10N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 46 nC
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220F
QM10N60F substitution
QM10N60F Datasheet (PDF)
qm10n60f.pdf

QM10N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM10N60F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me
Datasheet: QM04N65F1 , QM06N65F , QM07N60F , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , IRF1404 , QM12N50F , QM12N65B , QM12N65F , QM12N65P , QM12N70F , QM14N65F , QM2401C1 , QM2401D .
Keywords - QM10N60F MOSFET datasheet
QM10N60F cross reference
QM10N60F equivalent finder
QM10N60F lookup
QM10N60F substitution
QM10N60F replacement



LIST
Last Update
MOSFET: APG12N10D | AP90N06D | AP8P10S | AP80P01NF | AP80N08NF | AP80N08D | AP70N03DF | AP6G04S | AP50N06DF | AP3404MI | AP130N20MP | AP60N02BD | AP50N06Y | AP50N03S | AP4N06SI | AP3416AI
Popular searches
2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555