All MOSFET. QM10N60F Datasheet

 

QM10N60F Datasheet and Replacement


   Type Designator: QM10N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

QM10N60F Datasheet (PDF)

 ..1. Size:322K  ubiq
 qm10n60f.pdf pdf_icon

QM10N60F

QM10N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM10N60F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTZ35N25MB | SVGP20110NSTR | HSBA6214 | MXP4004AT | RU6888S | SGSP479 | MEE42942-G

Keywords - QM10N60F MOSFET datasheet

 QM10N60F cross reference
 QM10N60F equivalent finder
 QM10N60F lookup
 QM10N60F substitution
 QM10N60F replacement

 

 
Back to Top

 


 
.