QM10N60F Datasheet and Replacement
Type Designator: QM10N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220F
QM10N60F substitution
QM10N60F Datasheet (PDF)
qm10n60f.pdf

QM10N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM10N60F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me
Datasheet: QM04N65F1 , QM06N65F , QM07N60F , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , IRF1404 , QM12N50F , QM12N65B , QM12N65F , QM12N65P , QM12N70F , QM14N65F , QM2401C1 , QM2401D .
History: CEB83A3G | IXTZ35N25MB | RU6888S | 2SK2153 | 2SK1636L | CEH2305
Keywords - QM10N60F MOSFET datasheet
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History: CEB83A3G | IXTZ35N25MB | RU6888S | 2SK2153 | 2SK1636L | CEH2305



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