QM10N60F PDF and Equivalents Search

 

QM10N60F Specs and Replacement


   Type Designator: QM10N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F
 

 QM10N60F substitution

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QM10N60F datasheet

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QM10N60F

QM10N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM10N60F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me... See More ⇒

Detailed specifications: QM04N65F1 , QM06N65F , QM07N60F , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , IRF1404 , QM12N50F , QM12N65B , QM12N65F , QM12N65P , QM12N70F , QM14N65F , QM2401C1 , QM2401D .

Keywords - QM10N60F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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