QM10N60F Datasheet. Specs and Replacement

Type Designator: QM10N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220F

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QM10N60F datasheet

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QM10N60F

QM10N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM10N60F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me... See More ⇒

Detailed specifications: QM04N65F1, QM06N65F, QM07N60F, QM08N60F, QM09N50F, QM09N65B, QM09N65F, QM09N65P, IRF640, QM12N50F, QM12N65B, QM12N65F, QM12N65P, QM12N70F, QM14N65F, QM2401C1, QM2401D

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.