All MOSFET. PHP42N03LT Datasheet

 

PHP42N03LT Datasheet and Replacement


   Type Designator: PHP42N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT78
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PHP42N03LT Datasheet (PDF)

 ..1. Size:51K  philips
 php42n03lt 4.pdf pdf_icon

PHP42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP42N03LT, PHB42N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 42 A Stable off-state characteristics High thermal cycling performance RDS(ON) 26 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:50K  philips
 php42n03t 1.pdf pdf_icon

PHP42N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP42N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 42 Afeatures very low on-state r

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