PHP87N03LT Datasheet and Replacement
Type Designator: PHP87N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOT78
PHP87N03LT substitution
PHP87N03LT Datasheet (PDF)
phb87n03lt phd87n03lt php87n03lt 5.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (
php87n03t 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP87N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state
Datasheet: PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT , 2N7002 , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , PHT6N06LT , PHT8N06LT , PHW11N50E , PHW14N50E .
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