All MOSFET. QM6301S Datasheet

 

QM6301S Datasheet and Replacement


   Type Designator: QM6301S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8
 

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QM6301S Datasheet (PDF)

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QM6301S

QM6301S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM6301S is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 60V 30m 8Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter -60V 60m -5.7Aapplications . Applications The QM6301S meet the RoHS and

Datasheet: QM6016S , QM6020AP , QM6020P , QM6204S , QM6208S , QM6208V , QM6214Q , QM6214S , IRF530 , QM7018AD , QM7020P , QM8014D , QM8014U , QM8205V , QN7002 , QS5K2 , QS5U12 .

History: IRFAG30

Keywords - QM6301S MOSFET datasheet

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