All MOSFET. QM6301S Datasheet

 

QM6301S MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM6301S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.56 nC
   trⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8

 QM6301S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM6301S Datasheet (PDF)

 ..1. Size:400K  ubiq
 qm6301s.pdf

QM6301S QM6301S

QM6301S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM6301S is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 60V 30m 8Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter -60V 60m -5.7Aapplications . Applications The QM6301S meet the RoHS and

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
Back to Top