QM6301S Datasheet. Specs and Replacement

Type Designator: QM6301S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP-8

  📄📄 Copy 

QM6301S substitution

- MOSFET ⓘ Cross-Reference Search

 

QM6301S datasheet

 ..1. Size:400K  ubiq
 qm6301s.pdf pdf_icon

QM6301S

QM6301S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM6301S is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 60V 30m 8A density , which provide excellent RDSON and gate charge for most of the synchronous buck converter -60V 60m -5.7A applications . Applications The QM6301S meet the RoHS and ... See More ⇒

Detailed specifications: QM6016S, QM6020AP, QM6020P, QM6204S, QM6208S, QM6208V, QM6214Q, QM6214S, IRF1405, QM7018AD, QM7020P, QM8014D, QM8014U, QM8205V, QN7002, QS5K2, QS5U12

Keywords - QM6301S MOSFET specs

 QM6301S cross reference

 QM6301S equivalent finder

 QM6301S pdf lookup

 QM6301S substitution

 QM6301S replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs