QM6301S MOSFET. Datasheet pdf. Equivalent
Type Designator: QM6301S
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.56 nC
trⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP-8
QM6301S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM6301S Datasheet (PDF)
qm6301s.pdf
QM6301S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM6301S is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 60V 30m 8Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter -60V 60m -5.7Aapplications . Applications The QM6301S meet the RoHS and
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .