All MOSFET. QS8J2 Datasheet

 

QS8J2 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8J2

SMD Transistor Code: J02

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 260 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TSMT8

QS8J2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8J2 Datasheet (PDF)

1.1. qs8j2.pdf Size:523K _update_mosfet

QS8J2
QS8J2

QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSMT8 (6) (5) RDS(on) (Max.) 36mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Built-in G-S Protection Diode. (4) Tr2 Gate (8) Tr1 Drain 4) Small Sur

1.2. qs8j2.pdf Size:370K _rohm

QS8J2
QS8J2

1.5V Drive Pch MOSFET QS8J2 ? Dimensions (Unit : mm) ? Structure Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) ?Features 1) Low On-resistance. 2) High power package. 3) 1.5V drive. (1) (2) (3) (4) Abbreviated symbol : J02 ? Application Switching ? Inner circuit ? Packaging specifications Package Taping (8) (7) (6) (5) Type Code TR Basic ordering unit (pieces) 3000 (1) Tr1 Sou

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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