QS8J2 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS8J2
Marking Code: J02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TSMT8
QS8J2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8J2 Datasheet (PDF)
qs8j2.pdf
QS8J2 Pch -12V -4A Power MOSFET DatasheetlOutline(8) VDSS-12V (7) TSMT8(6) (5) RDS(on) (Max.)36mW(1) ID-4A(2) (3) PD1.5W(4) lFeatures lInner circuit1) Low on - resistance.(1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive.(2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Built-in G-S Protection Diode.(4) Tr2 Gate (8) Tr1 Drain 4) Small Sur
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SSP10N60A
History: SSP10N60A
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918