QS8J2 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS8J2
Marking Code: J02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm
Package: TSMT8
QS8J2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8J2 Datasheet (PDF)
1.1. qs8j2.pdf 
Size:523K _update_mosfet
QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSMT8 (6) (5) RDS(on) (Max.) 36mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Built-in G-S Protection Diode. (4) Tr2 Gate (8) Tr1 Drain 4) Small Sur
1.2. qs8j2.pdf Size:370K _rohm
1.5V Drive Pch MOSFET QS8J2 ? Dimensions (Unit : mm) ? Structure Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) ?Features 1) Low On-resistance. 2) High power package. 3) 1.5V drive. (1) (2) (3) (4) Abbreviated symbol : J02 ? Application Switching ? Inner circuit ? Packaging specifications Package Taping (8) (7) (6) (5) Type Code TR Basic ordering unit (pieces) 3000 (1) Tr1 Sou
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
