QS8J2 Datasheet. Specs and Replacement

Type Designator: QS8J2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TSMT8

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QS8J2 datasheet

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QS8J2

QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSMT8 (6) (5) RDS(on) (Max.) 36mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Built-in G-S Protection Diode. (4) Tr2 Gate (8) Tr1 Drain 4) Small Sur... See More ⇒

Detailed specifications: QS6M3, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, AOD4184A, QS8J4, QS8J5, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11, QS8M13

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