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QS8J2 Spec and Replacement


   Type Designator: QS8J2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TSMT8

 QS8J2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS8J2 Specs

 ..1. Size:523K  rohm
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QS8J2

QS8J2 Pch -12V -4A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSMT8 (6) (5) RDS(on) (Max.) 36mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Built-in G-S Protection Diode. (4) Tr2 Gate (8) Tr1 Drain 4) Small Sur... See More ⇒

Detailed specifications: QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , IRF730 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 .

Keywords - QS8J2 MOSFET specs

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