QS8J4 Datasheet and Replacement
Type Designator: QS8J4
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TSMT8
QS8J4 substitution
QS8J4 Datasheet (PDF)
qs8j4.pdf
QS8J4 Pch -30V -4A Power MOSFET DatasheetlOutline(8) VDSS-30V (7) TSMT8(6) (5) RDS(on) (Max.)56mW(1) ID-4A(2) (3) PD1.5W(4) lFeatures lInner circuit1) Low on - resistance.(5) Tr2 Drain (1) Tr1 Source (6) Tr2 Drain (2) Tr1 Gate 2) Built-in G-S Protection Diode.(7) Tr1 Drain (3) Tr2 Source (8) Tr1 Drain (4) Tr2 Gate 3) Small Surface Moun
Datasheet: QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , IRFZ44N , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , QS8M51 .
History: AOB1608L
Keywords - QS8J4 MOSFET datasheet
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History: AOB1608L
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