All MOSFET. QS8J4 Datasheet

 

QS8J4 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8J4

SMD Transistor Code: J04

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.4 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.056 Ohm

Package: TSMT8

QS8J4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8J4 Datasheet (PDF)

1.1. qs8j4.pdf Size:518K _update_mosfet

QS8J4 QS8J4

QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 56mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (5) Tr2 Drain (1) Tr1 Source (6) Tr2 Drain (2) Tr1 Gate 2) Built-in G-S Protection Diode. (7) Tr1 Drain (3) Tr2 Source (8) Tr1 Drain (4) Tr2 Gate 3) Small Surface Moun

1.2. qs8j4.pdf Size:338K _rohm

QS8J4 QS8J4

4V Drive Pch + Pch MOSFET QS8J4 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : J04 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TR Basic ordering unit

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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