All MOSFET. QS8J4 Datasheet

 

QS8J4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QS8J4
   Marking Code: J04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TSMT8

 QS8J4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS8J4 Datasheet (PDF)

 ..1. Size:518K  rohm
 qs8j4.pdf

QS8J4 QS8J4

QS8J4 Pch -30V -4A Power MOSFET DatasheetlOutline(8) VDSS-30V (7) TSMT8(6) (5) RDS(on) (Max.)56mW(1) ID-4A(2) (3) PD1.5W(4) lFeatures lInner circuit1) Low on - resistance.(5) Tr2 Drain (1) Tr1 Source (6) Tr2 Drain (2) Tr1 Gate 2) Built-in G-S Protection Diode.(7) Tr1 Drain (3) Tr2 Source (8) Tr1 Drain (4) Tr2 Gate 3) Small Surface Moun

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVDP2353PL3A

 

 
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