QS8J4 Datasheet. Specs and Replacement

Type Designator: QS8J4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TSMT8

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QS8J4 datasheet

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QS8J4

QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 56mW (1) ID -4A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (5) Tr2 Drain (1) Tr1 Source (6) Tr2 Drain (2) Tr1 Gate 2) Built-in G-S Protection Diode. (7) Tr1 Drain (3) Tr2 Source (8) Tr1 Drain (4) Tr2 Gate 3) Small Surface Moun... See More ⇒

Detailed specifications: QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, QS8J2, IRF3205, QS8J5, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11, QS8M13, QS8M51

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