QS8K2 Specs and Replacement
Type Designator: QS8K2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: TSMT8
QS8K2 substitution
QS8K2 Specs
qs8k2.pdf
QS8K2 Datasheet 30V Nch +Nch Middle Power MOSFET lOutline l TSMT8 VDSS 30V RDS(on)(Max.) 54m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒
qs8k21.pdf
QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET lOutline l TSMT8 VDSS 45V RDS(on)(Max.) 53m ID 4A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒
Detailed specifications: QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , 20N60 , QS8K21 , QS8M11 , QS8M13 , QS8M51 , RFH25N18 , RFH25N20 , RFH25P08 , RFH25P10 .
History: SI7326DN
Keywords - QS8K2 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI7326DN
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