All MOSFET. APT97N65LC6 Datasheet

 

APT97N65LC6 Datasheet and Replacement


   Type Designator: APT97N65LC6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 862 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 97 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 5045 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-264
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APT97N65LC6 Datasheet (PDF)

 ..1. Size:144K  microsemi
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APT97N65LC6

APT97N65B2C6 APT97N65LC6 650V 97A 0.041APT97N65B2C6COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVF3N80D | SVGP20110NSTR | MEE42942-G | MXP4004AT | STD60NF06

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