APT97N65LC6 MOSFET. Datasheet pdf. Equivalent
Type Designator: APT97N65LC6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 862 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 97 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 300 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 5045 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO-264
APT97N65LC6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT97N65LC6 Datasheet (PDF)
apt97n65b2c6 apt97n65lc6.pdf
APT97N65B2C6 APT97N65LC6 650V 97A 0.041APT97N65B2C6COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT60M75PVR | FDMA3028N
History: APT60M75PVR | FDMA3028N
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