All MOSFET. APT9F100B Datasheet

 

APT9F100B MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT9F100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 337 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-247

 APT9F100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT9F100B Datasheet (PDF)

 ..1. Size:216K  microsemi
 apt9f100b apt9f100s.pdf

APT9F100B APT9F100B

APT9F100B APT9F100S 1000V, 9A, 1.6 Max, trr 200nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

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History: SST4391 | IPW65R019C7 | APT8015JVR

 

 
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