All MOSFET. APT9M100B Datasheet

 

APT9M100B Datasheet and Replacement


   Type Designator: APT9M100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 335 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-247
 

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APT9M100B Datasheet (PDF)

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APT9M100B

APT9M100B APT9M100S 1000V, 9A, 1.40 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

Datasheet: APT94N60L2C3G , APT94N65B2C3G , APT94N65B2C6 , APT94N65LC6 , APT97N65B2C6 , APT97N65LC6 , APT9F100B , APT9F100S , SKD502T , APT9M100S , APTC60AM18SCG , APTC60AM24SCTG , APTC60AM35SCTG , APTC60DAM18CTG , APTC60DAM24CT1G , APTC60DDAM45CT1G , APTC60DDAM70CT1G .

History: BL25N40-A | NVD4806N | APT56M60L | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3

Keywords - APT9M100B MOSFET datasheet

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