APT9M100B MOSFET. Datasheet pdf. Equivalent
Type Designator: APT9M100B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 335 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-247
APT9M100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT9M100B Datasheet (PDF)
..1. Size:209K microsemi
apt9m100b apt9m100s.pdf
apt9m100b apt9m100s.pdf
APT9M100B APT9M100S 1000V, 9A, 1.40 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
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