APT9M100B Datasheet. Specs and Replacement

Type Designator: APT9M100B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 335 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-247

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APT9M100B datasheet

 ..1. Size:209K  microsemi
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APT9M100B

APT9M100B APT9M100S 1000V, 9A, 1.40 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of ... See More ⇒

Detailed specifications: APT94N60L2C3G, APT94N65B2C3G, APT94N65B2C6, APT94N65LC6, APT97N65B2C6, APT97N65LC6, APT9F100B, APT9F100S, 18N50, APT9M100S, APTC60AM18SCG, APTC60AM24SCTG, APTC60AM35SCTG, APTC60DAM18CTG, APTC60DAM24CT1G, APTC60DDAM45CT1G, APTC60DDAM70CT1G

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