All MOSFET. APT9M100S Datasheet

 

APT9M100S Datasheet and Replacement


   Type Designator: APT9M100S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 335 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: D3PAK
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APT9M100S Datasheet (PDF)

 ..1. Size:209K  microsemi
 apt9m100b apt9m100s.pdf pdf_icon

APT9M100S

APT9M100B APT9M100S 1000V, 9A, 1.40 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

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History: 20N03L-TO252 | 2N6762JTXV

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