SW1N55D MOSFET Datasheet: N-Ch, 550V, 1A. Full specification with pinout and replacement list

SW1N55D Specs and Replacement

   Type Designator: SW1N55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 77.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-251

SW1N55D substitution

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SW1N55D datasheet

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SAMWIN SW1N55D N-channel IPAK MOSFET TO-251 Features BVDSS 550V ID 1A High ruggedness RDS(ON) (Max6.5 )@VGS=10V RDS(ON) 6.5 Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3... See More ⇒

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Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 4.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

Detailed specifications: SKI06073 , SKI06106 , SKI07074 , SKI07114 , SKI07171 , SKI10123 , SKI10195 , SKI10297 , IRF740 , AON7430L , AP9915H , AP9915J , FHP730 , FIR120N055PG , FTP16N06B , HY4008W , HY4008A .