SW1N55D Datasheet. Specs and Replacement

Type Designator: SW1N55D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-251

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SW1N55D datasheet

 ..1. Size:511K  samwin
 sw1n55d.pdf pdf_icon

SW1N55D

SAMWIN SW1N55D N-channel IPAK MOSFET TO-251 Features BVDSS 550V ID 1A High ruggedness RDS(ON) (Max6.5 )@VGS=10V RDS(ON) 6.5 Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3... See More ⇒

 9.1. Size:293K  1
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SW1N55D

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 9.2. Size:503K  samsung
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SW1N55D

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 4.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

Detailed specifications: SKI06073, SKI06106, SKI07074, SKI07114, SKI07171, SKI10123, SKI10195, SKI10297, IRF840, AON7430L, AP9915H, AP9915J, FHP730, FIR120N055PG, FTP16N06B, HY4008W, HY4008A

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