All MOSFET. SW1N55D Datasheet

 

SW1N55D Datasheet and Replacement


   Type Designator: SW1N55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-251
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SW1N55D Datasheet (PDF)

 ..1. Size:511K  samwin
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SW1N55D

SAMWIN SW1N55D N-channel IPAK MOSFET TO-251 Features BVDSS : 550V ID : 1A High ruggedness RDS(ON) (Max6.5)@VGS=10V RDS(ON) :6.5 Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3

 9.1. Size:293K  1
 ssi1n50a ssw1n50a.pdf pdf_icon

SW1N55D

 9.2. Size:503K  samsung
 ssw1n50a.pdf pdf_icon

SW1N55D

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 4.046 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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