All MOSFET. SW1N55D Datasheet

 

SW1N55D MOSFET. Datasheet pdf. Equivalent

Type Designator: SW1N55D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 77.1 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 7 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 6.5 Ohm

Package: TO-251

SW1N55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW1N55D Datasheet (PDF)

1.1. sw1n55d.pdf Size:511K _update-mosfet

SW1N55D
SW1N55D

SAMWIN SW1N55D N-channel IPAK MOSFET TO-251 Features BVDSS : 550V ID : 1A ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V RDS(ON) :6.5Ω ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3

5.1. ssw1n50a.pdf Size:503K _samsung

SW1N55D
SW1N55D

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) : 4.046 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

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