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MDU2657 Spec and Replacement


   Type Designator: MDU2657
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWERDFN56

 MDU2657 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDU2657 Specs

 ..1. Size:1639K  magnachip
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MDU2657

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 0.1. Size:598K  cn vbsemi
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MDU2657

MDU2657RH www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S ... See More ⇒

 8.1. Size:137K  1
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MDU2657

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Detailed specifications: UPA2700GR , STQ1NC45 , RU7088R3 , PTP04N04N , OSG55R190AF , OSG55R190DF , OSG55R190FF , OSG55R190PF , IRF540 , JCS4N60V , JCS4N60R , JCS4N60S , JCS4N60B , JCS4N60C , JCS4N60F , CMP1405 , CMB1405 .

History: PTD3006 | PSMN5R6-60YL

Keywords - MDU2657 MOSFET specs

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