MDU2657 Datasheet. Specs and Replacement

Type Designator: MDU2657  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: POWERDFN56

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MDU2657 datasheet

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MDU2657

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MDU2657

MDU2657RH www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S ... See More ⇒

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MDU2657

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Detailed specifications: UPA2700GR, STQ1NC45, RU7088R3, PTP04N04N, OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF, IRF540, JCS4N60V, JCS4N60R, JCS4N60S, JCS4N60B, JCS4N60C, JCS4N60F, CMP1405, CMB1405

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