All MOSFET. JCS4N60V Datasheet

 

JCS4N60V MOSFET. Datasheet pdf. Equivalent

Type Designator: JCS4N60V

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 51 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Rise Time (tr): 55 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: IPAK

JCS4N60V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS4N60V Datasheet (PDF)

3.1. jcs4n60f.pdf Size:948K _update-mosfet

JCS4N60V
JCS4N60V

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5Ω (@Vgs=10V) 27 nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性

3.2. jcs4n60f.pdf Size:948K _jilin_sino

JCS4N60V
JCS4N60V

N lSX:_W:WHe^vfSO{ R N-CHANNEL MOSFET JCS4N60 \ň Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V 27 nC Qg APPLICATIONS (u High efficiency switch

 4.1. jcs4n65f-c-r-v.pdf Size:779K _update

JCS4N60V
JCS4N60V

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N65C 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson(Vgs=10V) 2.5Ω 9nC Qg APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast UPS 电源 UPS 产品特性 FEATURES 低栅极电荷

4.2. jcs4n65f-c-r-v.pdf Size:779K _jilin_sino

JCS4N60V
JCS4N60V

N lSX:_W:WHe^vfSO{ R N-CHANNEL MOSFET JCS4N65C \ň Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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