All MOSFET. US6K2 Datasheet

 

US6K2 MOSFET. Datasheet pdf. Equivalent

Type Designator: US6K2

Marking Code: K02

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.4 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 15 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TUMT6

US6K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US6K2 Datasheet (PDF)

1.1. us6k2.pdf Size:66K _update-mosfet

US6K2
US6K2

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR ∗1 Basic

1.2. us6k2.pdf Size:77K _rohm

US6K2
US6K2

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR ?1 Basic orde

 

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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