US6K2 Datasheet and Replacement
Type Designator: US6K2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT6
US6K2 substitution
US6K2 Datasheet (PDF)
us6k2.pdf

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02 ApplicationsSwitching Packaging specifications Inner circuit (6) (5) (4)Package TapingType Code TR1Basic
Datasheet: US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , AON6414A , US6K4 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L , APM3009NF .
History: 2P985V-2 | AFP4925W | NCE40P07S | SFS9614 | CSD87333Q3D | STF120NF10 | IPD80R1K0CE
Keywords - US6K2 MOSFET datasheet
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History: 2P985V-2 | AFP4925W | NCE40P07S | SFS9614 | CSD87333Q3D | STF120NF10 | IPD80R1K0CE



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