US6K2 MOSFET. Datasheet pdf. Equivalent
Type Designator: US6K2
Marking Code: K02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.7 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 1.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 1.4 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 15 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: TUMT6
US6K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
US6K2 Datasheet (PDF)
1.1. us6k2.pdf 
Size:66K _update-mosfet
US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR ∗1 Basic
1.2. us6k2.pdf Size:77K _rohm
US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR ?1 Basic orde
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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