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US6K2 Specs and Replacement


   Type Designator: US6K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TUMT6
 

 US6K2 substitution

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US6K2 datasheet

 ..1. Size:66K  rohm
 us6k2.pdf pdf_icon

US6K2

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR 1 Basic... See More ⇒

Detailed specifications: US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , IRFB4227 , US6K4 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L , APM3009NF .

Keywords - US6K2 MOSFET specs

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