US6K2 Datasheet. Specs and Replacement
Type Designator: US6K2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT6
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US6K2 substitution
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US6K2 datasheet
us6k2.pdf
US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol K02 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR 1 Basic... See More ⇒
Detailed specifications: US5U2, US5U29TR, US5U3, US5U30, US5U35, US5U38, US6J11, US6K1, AON6414A, US6K4, US6M1, US6M11, US6M2, US6U37, AM4437P, AON6718L, APM3009NF
Keywords - US6K2 MOSFET specs
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