US6M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: US6M2
Marking Code: M02
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT6
US6M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
US6M2 Datasheet (PDF)
us6m2.pdf
US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 ApplicationsSwitching
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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