CMT04N60GN252 Specs and Replacement
Type Designator: CMT04N60GN252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO252
CMT04N60GN252 substitution
CMT04N60GN252 datasheet
cmt04n60.pdf
CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc... See More ⇒
Detailed specifications: ARF447 , BUZ380 , CEP703AL , CEB703AL , CMT04N60GN220 , CMT04N60XN220 , CMT04N60GN220FP , CMT04N60XN220FP , AO4407A , CMT04N60XN252 , DG2N60-251 , DG2N60-252 , DG2N60-220 , DG2N60-220F , DG2N60-126 , DG2N65-251 , DG2N65-252 .
History: FDC3612
Keywords - CMT04N60GN252 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDC3612
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