CMT04N60GN252 Datasheet. Specs and Replacement

Type Designator: CMT04N60GN252  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO252

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CMT04N60GN252 datasheet

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CMT04N60GN252

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc... See More ⇒

Detailed specifications: ARF447, BUZ380, CEP703AL, CEB703AL, CMT04N60GN220, CMT04N60XN220, CMT04N60GN220FP, CMT04N60XN220FP, IRF830, CMT04N60XN252, DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252

Keywords - CMT04N60GN252 MOSFET specs

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