CMT04N60GN252 PDF and Equivalents Search

 

CMT04N60GN252 Specs and Replacement


   Type Designator: CMT04N60GN252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252
 

 CMT04N60GN252 substitution

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CMT04N60GN252 datasheet

 6.1. Size:341K  champion
cmt04n60.pdf pdf_icon

CMT04N60GN252

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc... See More ⇒

Detailed specifications: ARF447 , BUZ380 , CEP703AL , CEB703AL , CMT04N60GN220 , CMT04N60XN220 , CMT04N60GN220FP , CMT04N60XN220FP , AO4407A , CMT04N60XN252 , DG2N60-251 , DG2N60-252 , DG2N60-220 , DG2N60-220F , DG2N60-126 , DG2N65-251 , DG2N65-252 .

History: FDC3612

Keywords - CMT04N60GN252 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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