RFP8N20L Datasheet. Specs and Replacement

Type Designator: RFP8N20L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 250 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220AB

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RFP8N20L datasheet

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RFP8N20L

RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFET 8A, 200V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.600 effect transistor is specifically designed for use with logic Design Optimized for 5V Gate Drives level (5V) driving sources in applications such as programmable controllers, ... See More ⇒

Detailed specifications: RFP4N100, RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, 2N60, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, RFT3055LE, RFW2N06RLE

Keywords - RFP8N20L MOSFET specs

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