All MOSFET. RFP8N20L Datasheet

 

RFP8N20L MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP8N20L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO220AB

RFP8N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP8N20L Datasheet (PDF)

1.1. rfp8n20l.pdf Size:38K _intersil

RFP8N20L
RFP8N20L

RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFET • 8A, 200V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 0.600Ω effect transistor is specifically designed for use with logic • Design Optimized for 5V Gate Drives level (5V) driving sources in applications such as programmable controllers,

Datasheet: RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , IRF9Z34 , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE .

 


RFP8N20L
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