All MOSFET. RFP8N20L Datasheet

 

RFP8N20L Datasheet and Replacement


   Type Designator: RFP8N20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 250(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220AB
 

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RFP8N20L Datasheet (PDF)

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RFP8N20L

RFP8N20LData Sheet July 1999 File Number 1514.38A, 200V, 0.600 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 8A, 200VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.600effect transistor is specifically designed for use with logic Design Optimized for 5V Gate Driveslevel (5V) driving sources in applications such asprogrammable controllers,

Datasheet: RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , IRF1405 , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE .

History: P0660EI | STP11NK40ZFP | OSG55R074HSZF | MTM12P10 | AP72T03GJ | IXFH22N60P | KF5N50IZ

Keywords - RFP8N20L MOSFET datasheet

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