RFP8N20L PDF and Equivalents Search

 

RFP8N20L Specs and Replacement


   Type Designator: RFP8N20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 250(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220AB
 

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RFP8N20L datasheet

 ..1. Size:38K  intersil
 rfp8n20l.pdf pdf_icon

RFP8N20L

RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFET 8A, 200V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.600 effect transistor is specifically designed for use with logic Design Optimized for 5V Gate Drives level (5V) driving sources in applications such as programmable controllers, ... See More ⇒

Detailed specifications: RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , STP65NF06 , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE .

Keywords - RFP8N20L MOSFET specs

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