RFT1P06E MOSFET Datasheet: P-Ch, 60V, 1.4A. Full specification with pinout and replacement list

RFT1P06E Specs and Replacement

   Type Designator: RFT1P06E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm
   Package: SOT223

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RFT1P06E datasheet

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RFT1P06E Data Sheet August 1999 File Number 4495.1 1.4A, 60V, 0.285 Ohm, ESD Rated, Features P-Channel Power MOSFET 1.4A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.285 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outs... See More ⇒

Detailed specifications: RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , IRF830 , RFT2P03L , RFT3055LE , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U .