RFT1P06E Datasheet. Specs and Replacement

Type Designator: RFT1P06E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm

Package: SOT223

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RFT1P06E datasheet

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RFT1P06E

RFT1P06E Data Sheet August 1999 File Number 4495.1 1.4A, 60V, 0.285 Ohm, ESD Rated, Features P-Channel Power MOSFET 1.4A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.285 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outs... See More ⇒

Detailed specifications: RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, FTP08N06A, RFT2P03L, RFT3055LE, RFW2N06RLE, RLP1N06CLE, SD10425JAA, SDF034JAA-D, SDF034JAA-S, SDF034JAA-U

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