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RFT2P03L Specs and Replacement


   Type Designator: RFT2P03L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT223
 

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RFT2P03L datasheet

 ..1. Size:101K  intersil
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RFT2P03L

RFT2P03L Data Sheet July 1999 File Number 4574.2 2.1A, 30V, 0.150 Ohm, P-Channel Logic Features Level, Power MOSFET 2.1A, 30V This product is a P-Channel power MOSFET manufactured rDS(ON) = 0.150 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives Thermal Impedance SPICE M... See More ⇒

Detailed specifications: RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , IRLB3034 , RFT3055LE , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D .

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