RFT2P03L Datasheet and Replacement
Type Designator: RFT2P03L
Marking Code: 2P03L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27 nC
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT223
RFT2P03L substitution
RFT2P03L Datasheet (PDF)
..1. Size:101K intersil
rft2p03l.pdf
rft2p03l.pdf
RFT2P03LData Sheet July 1999 File Number 4574.22.1A, 30V, 0.150 Ohm, P-Channel Logic FeaturesLevel, Power MOSFET 2.1A, 30VThis product is a P-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives Thermal Impedance SPICE M
Datasheet: RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , IRF520 , RFT3055LE , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D .
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