RFT2P03L Datasheet. Specs and Replacement

Type Designator: RFT2P03L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT223

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RFT2P03L datasheet

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RFT2P03L

RFT2P03L Data Sheet July 1999 File Number 4574.2 2.1A, 30V, 0.150 Ohm, P-Channel Logic Features Level, Power MOSFET 2.1A, 30V This product is a P-Channel power MOSFET manufactured rDS(ON) = 0.150 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives Thermal Impedance SPICE M... See More ⇒

Detailed specifications: RFP70N06, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, IRFB31N20D, RFT3055LE, RFW2N06RLE, RLP1N06CLE, SD10425JAA, SDF034JAA-D, SDF034JAA-S, SDF034JAA-U, SDF034JAB-D

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