RFT3055LE Datasheet. Specs and Replacement

Type Designator: RFT3055LE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT223

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RFT3055LE datasheet

 ..1. Size:106K  intersil
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RFT3055LE

RFT3055LE Data Sheet August 1999 File Number 4537.3 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Features Level, ESD Rated, Power MOSFET 2.0A, 60V This product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150 using the MegaFET process. This process, which uses 2kV ESD Protected feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, res... See More ⇒

Detailed specifications: RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, 8N60, RFW2N06RLE, RLP1N06CLE, SD10425JAA, SDF034JAA-D, SDF034JAA-S, SDF034JAA-U, SDF034JAB-D, SDF034JAB-S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.