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RFT3055LE Specs and Replacement


   Type Designator: RFT3055LE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT223
 

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RFT3055LE datasheet

 ..1. Size:106K  intersil
 rft3055le.pdf pdf_icon

RFT3055LE

RFT3055LE Data Sheet August 1999 File Number 4537.3 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Features Level, ESD Rated, Power MOSFET 2.0A, 60V This product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150 using the MegaFET process. This process, which uses 2kV ESD Protected feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, res... See More ⇒

Detailed specifications: RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , IRF9640 , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D , SDF034JAB-S .

Keywords - RFT3055LE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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