All MOSFET. RFT3055LE Datasheet

 

RFT3055LE Datasheet and Replacement


   Type Designator: RFT3055LE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT223
 

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RFT3055LE Datasheet (PDF)

 ..1. Size:106K  intersil
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RFT3055LE

RFT3055LEData Sheet August 1999 File Number 4537.32.0A, 60V, 0.150 Ohm, N-Channel, Logic FeaturesLevel, ESD Rated, Power MOSFET 2.0A, 60VThis product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses 2kV ESD Protectedfeature sizes approaching those of LSI circuits, givesoptimum utilization of silicon, res

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BSZ050N03MSG | NCE2305

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