NTA4151PT1 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTA4151PT1
Marking Code: TN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.301 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
|Id|ⓘ - Maximum Drain Current: 0.76 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.1 nC
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 28 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SC-75
NTA4151PT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTA4151PT1 Datasheet (PDF)
nta4151pt1 nta4151p nte4151p.pdf
NTA4151P, NTE4151PSmall Signal MOSFET-20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89Features http://onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package0.26 W @ -4.5 V ESD Protected Gate-20 V 0.35 W @ -2.5 V -760 mA Pb-Free Packages are
nta4151p nte4151p.pdf
NTA4151P, NTE4151PSmall Signal MOSFET-20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89Featureswww.onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm)V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package0.26 W @ -4.5 V ESD Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and
nta4151p.pdf
SMD Type MOSFETP-Channel MOSFETNTA4151P SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) =-20V ID =-760m A (VGS =-4.5V) RDS(ON) 260m (VGS =-4.5V)3D RDS(ON) 350m (VGS =-2.5V) 0.30.05+0.1 RDS(ON) 490m (VGS =-1.8V) 0.5-0.11.Gate2.Source3.DrainGS Absolute Maximu
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
