SKS10N20 Datasheet and Replacement
Type Designator: SKS10N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
SKS10N20 substitution
SKS10N20 Datasheet (PDF)
sks10n20.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SKS10N20FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , K4145 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E .
History: VN35AK | 24N50B | WMK060N10LGS | AM7341P | TPC6103 | RU80T4H | FQPF13N50T
Keywords - SKS10N20 MOSFET datasheet
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History: VN35AK | 24N50B | WMK060N10LGS | AM7341P | TPC6103 | RU80T4H | FQPF13N50T



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