SKS10N20 Datasheet. Specs and Replacement

Type Designator: SKS10N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

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SKS10N20 datasheet

 ..1. Size:199K  inchange semiconductor
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SKS10N20

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SKS10N20 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

Detailed specifications: MMF80R450PTH, MMF80R650PTH, MTP2N50, NTB082N65S3F, NTE2393, NTP082N65S3F, NTPF082N65S3F, SIHA11N80E, IRF9540N, STP30NF10FP, SUD25N15-52-E3, SUP70040E, SWHA069R10VS, TK290P60Y, VN88AFD, 2SK3262-01MR, MTY30N50E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.