SKS10N20 Specs and Replacement
Type Designator: SKS10N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
SKS10N20 substitution
SKS10N20 datasheet
sks10n20.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SKS10N20 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
Detailed specifications: MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , 2N7002 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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