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SKS10N20 Spec and Replacement


   Type Designator: SKS10N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F

 SKS10N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKS10N20 Specs

 ..1. Size:199K  inchange semiconductor
 sks10n20.pdf pdf_icon

SKS10N20

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SKS10N20 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

Detailed specifications: MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , 2N7002 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E .

History: SUP85N15-21 | TF3404

Keywords - SKS10N20 MOSFET specs

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