CMB80N06 Datasheet. Specs and Replacement

Type Designator: CMB80N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 815 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: TO263

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CMB80N06 datasheet

 ..1. Size:1054K  cmos
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CMB80N06

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif... See More ⇒

Detailed specifications: SUD25N15-52-E3, SUP70040E, SWHA069R10VS, TK290P60Y, VN88AFD, 2SK3262-01MR, MTY30N50E, CMP80N06, P55NF06, CMI80N06, BUK437-500A, BUK637-400B, NTGD4161PT1G, NTGD4169FT1G, NTGS1135PT1G, NTGS3130NT1G, NTGS3136PT1G

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