All MOSFET. CMB80N06 Datasheet

 

CMB80N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: CMB80N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 260 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 76 nC

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 815 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm

Package: TO263

CMB80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMB80N06 Datasheet (PDF)

1.1. cmp80n06 cmb80n06 cmi80n06.pdf Size:1054K _update-mosfet

CMB80N06
CMB80N06

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif

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