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NTP8G202N Spec and Replacement


   Type Designator: NTP8G202N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-220

 NTP8G202N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP8G202N Specs

 ..1. Size:104K  onsemi
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NTP8G202N

NTP8G202N Power GaN Cascode Transistor 600 V, 290 mW Features Fast Switching Extremely Low Qrr www.onsemi.com Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) TYP Compliant 600 V 290 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit N-Channel MOSFET Drain-to-Source Volta... See More ⇒

 7.1. Size:102K  onsemi
 ntp8g206n.pdf pdf_icon

NTP8G202N

NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features Fast Switching Extremely Low Qrr www.onsemi.com Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) TYP Compliant 600 V 150 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit N-Channel MOSFET Drain-to-Source Volta... See More ⇒

Detailed specifications: NTP6413ANG , NTP65N02R , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 , NTP75N06L , NTP85N03 , 2N7000 , NTP8G206N , NTP90N02 , NTQS6463R2 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G .

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