NTP8G202N Datasheet. Specs and Replacement

Type Designator: NTP8G202N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220

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NTP8G202N datasheet

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NTP8G202N

NTP8G202N Power GaN Cascode Transistor 600 V, 290 mW Features Fast Switching Extremely Low Qrr www.onsemi.com Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) TYP Compliant 600 V 290 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit N-Channel MOSFET Drain-to-Source Volta... See More ⇒

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 ntp8g206n.pdf pdf_icon

NTP8G202N

NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features Fast Switching Extremely Low Qrr www.onsemi.com Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) TYP Compliant 600 V 150 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit N-Channel MOSFET Drain-to-Source Volta... See More ⇒

Detailed specifications: NTP6413ANG, NTP65N02R, NTP75N03-6G, NTP75N03L09, NTP75N03R, NTP75N06, NTP75N06L, NTP85N03, IRFB4227, NTP8G206N, NTP90N02, NTQS6463R2, NTR0202PLT1, NTR1P02L, NTR1P02T1, NTR1P02T3, NTR2101PT1G

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