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NTQS6463R2 Spec and Replacement


   Type Designator: NTQS6463R2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8

 NTQS6463R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTQS6463R2 Specs

 ..1. Size:66K  onsemi
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NTQS6463R2

NTQS6463 Power MOSFET -20 V, -6.8 A, P-Channel TSSOP-8 Features New Low Profile TSSOP-8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life http //onsemi.com Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery VDSS RDS(on) TYP ID MAX Avalanche Energy Specified -20 V 20 mW @ -10 V -6.8 A IDSS and VDS(on) Specified at Elevated Tem... See More ⇒

Detailed specifications: NTP75N03L09 , NTP75N03R , NTP75N06 , NTP75N06L , NTP85N03 , NTP8G202N , NTP8G206N , NTP90N02 , 7N65 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , NTR3A30PZ .

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