NTQS6463R2 Datasheet. Specs and Replacement

Type Designator: NTQS6463R2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP-8

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NTQS6463R2 datasheet

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NTQS6463R2

NTQS6463 Power MOSFET -20 V, -6.8 A, P-Channel TSSOP-8 Features New Low Profile TSSOP-8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life http //onsemi.com Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery VDSS RDS(on) TYP ID MAX Avalanche Energy Specified -20 V 20 mW @ -10 V -6.8 A IDSS and VDS(on) Specified at Elevated Tem... See More ⇒

Detailed specifications: NTP75N03L09, NTP75N03R, NTP75N06, NTP75N06L, NTP85N03, NTP8G202N, NTP8G206N, NTP90N02, 7N65, NTR0202PLT1, NTR1P02L, NTR1P02T1, NTR1P02T3, NTR2101PT1G, NTR3161NT1G, NTR3162PT1G, NTR3A30PZ

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