NTQS6463R2 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTQS6463R2
Marking Code: 463
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 22 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP-8
NTQS6463R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTQS6463R2 Datasheet (PDF)
..1. Size:66K onsemi
ntqs6463-d ntqs6463r2.pdf
ntqs6463-d ntqs6463r2.pdf
NTQS6463Power MOSFET-20 V, -6.8 A, P-Channel TSSOP-8Features New Low Profile TSSOP-8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life http://onsemi.com Logic Level Gate Drive Diode Exhibits High Speed, Soft RecoveryVDSS RDS(on) TYP ID MAX Avalanche Energy Specified-20 V 20 mW @ -10 V -6.8 A IDSS and VDS(on) Specified at Elevated Tem
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