NTR3A30PZ Datasheet. Specs and Replacement

Type Designator: NTR3A30PZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 208 nS

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT-23

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NTR3A30PZ datasheet

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NTR3A30PZ

NTR3A30PZ Power MOSFET -20 V, -5.5 A, Single P-Channel 2.4 x 2.9 x 1.0 mm SOT-23 Package Features Low RDS(on) Solution in 2.4 mm x 2.9 mm Package http //onsemi.com ESD Diode-Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) Max ID MAX Applications 38 mW @ -4.5 V High Side Load Switch -20 V 50 mW @ -2.5 V -5.5 A... See More ⇒

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NTR3A30PZ

NTR3A052PZ MOSFET Power, Single P-Channel, SOT-23 -20 V, -3.6 A Features Leading -20 V Trench for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) Max ID MAX Compliant Applications 47 mW @ -4.5 V Power Load Switch -20 V 63 mW @ -2.5 V -3.6 A MAXIMUM RATINGS (TJ = 2... See More ⇒

Detailed specifications: NTQS6463R2, NTR0202PLT1, NTR1P02L, NTR1P02T1, NTR1P02T3, NTR2101PT1G, NTR3161NT1G, NTR3162PT1G, IRF1010E, NTR4003NT1G, NTR4101PT1G, NTR4170NT1G, NTR4171PT1G, NTR4501NT1, NTR4502PT1, NTR4503NT1, NTR5103N

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