NTR3A30PZ Datasheet and Replacement
Type Designator: NTR3A30PZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 208 nS
Cossⓘ - Output Capacitance: 148 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOT-23
NTR3A30PZ substitution
NTR3A30PZ Datasheet (PDF)
ntr3a30pz.pdf

NTR3A30PZPower MOSFET-20 V, -5.5 A, Single P-Channel 2.4 x 2.9 x 1.0 mm SOT-23 PackageFeatures Low RDS(on) Solution in 2.4 mm x 2.9 mm Packagehttp://onsemi.com ESD Diode-Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) Max ID MAXApplications38 mW @ -4.5 V High Side Load Switch-20 V 50 mW @ -2.5 V -5.5 A
ntr3a052pz.pdf

NTR3A052PZMOSFET Power, SingleP-Channel, SOT-23-20 V, -3.6 AFeatures Leading -20 V Trench for Low RDS(on)www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) Max ID MAXCompliantApplications47 mW @ -4.5 V Power Load Switch-20 V 63 mW @ -2.5 V -3.6 AMAXIMUM RATINGS (TJ = 2
Datasheet: NTQS6463R2 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , IRF1010E , NTR4003NT1G , NTR4101PT1G , NTR4170NT1G , NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , NTR4503NT1 , NTR5103N .
History: SMY51 | 50N06G-TA3-T | R6524ENZ
Keywords - NTR3A30PZ MOSFET datasheet
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History: SMY51 | 50N06G-TA3-T | R6524ENZ



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