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NTR3A30PZ Spec and Replacement


   Type Designator: NTR3A30PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 208 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-23
 

 NTR3A30PZ substitution

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NTR3A30PZ Specs

 ..1. Size:109K  onsemi
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NTR3A30PZ

NTR3A30PZ Power MOSFET -20 V, -5.5 A, Single P-Channel 2.4 x 2.9 x 1.0 mm SOT-23 Package Features Low RDS(on) Solution in 2.4 mm x 2.9 mm Package http //onsemi.com ESD Diode-Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) Max ID MAX Applications 38 mW @ -4.5 V High Side Load Switch -20 V 50 mW @ -2.5 V -5.5 A... See More ⇒

 9.1. Size:127K  onsemi
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NTR3A30PZ

NTR3A052PZ MOSFET Power, Single P-Channel, SOT-23 -20 V, -3.6 A Features Leading -20 V Trench for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) Max ID MAX Compliant Applications 47 mW @ -4.5 V Power Load Switch -20 V 63 mW @ -2.5 V -3.6 A MAXIMUM RATINGS (TJ = 2... See More ⇒

Detailed specifications: NTQS6463R2 , NTR0202PLT1 , NTR1P02L , NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , IRF9540N , NTR4003NT1G , NTR4101PT1G , NTR4170NT1G , NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , NTR4503NT1 , NTR5103N .

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