NTTD4401FR2 Datasheet. Specs and Replacement
Type Designator: NTTD4401FR2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO8
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NTTD4401FR2 substitution
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NTTD4401FR2 datasheet
nttd4401f nttd4401fr2.pdf
NTTD4401F FETKYt Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package http //onsemi.com The FETKY product family incorporates low RDS(on), true logic level MOSFET PRODUCT SUMMARY MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) Typ ID... See More ⇒
Detailed specifications: NTR5198NL, NTRV4101P, NTS2101PT1, NTS4001NT1, NTS4101PT1, NTS4172NT1G, NTS4173PT1G, NTS4409N, 4435, NTTFS3A08PZ, NTTFS3A08PZTAG, NTTFS4821NTAG, NTTFS4823NTAG, NTTFS4824NTAG, NTTFS4928NTAG, NTTFS4929NTAG, NTTFS4930NTAG
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MOSFET Parameters. How They Affect Each Other
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