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NTTD4401FR2 Specs and Replacement


   Type Designator: NTTD4401FR2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: MICRO8
 

 NTTD4401FR2 substitution

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NTTD4401FR2 Specs

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NTTD4401FR2

NTTD4401F FETKYt Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package http //onsemi.com The FETKY product family incorporates low RDS(on), true logic level MOSFET PRODUCT SUMMARY MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) Typ ID... See More ⇒

Detailed specifications: NTR5198NL , NTRV4101P , NTS2101PT1 , NTS4001NT1 , NTS4101PT1 , NTS4172NT1G , NTS4173PT1G , NTS4409N , CS150N03A8 , NTTFS3A08PZ , NTTFS3A08PZTAG , NTTFS4821NTAG , NTTFS4823NTAG , NTTFS4824NTAG , NTTFS4928NTAG , NTTFS4929NTAG , NTTFS4930NTAG .

Keywords - NTTD4401FR2 MOSFET specs

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