GPT09N50D PDF and Equivalents Search

 

GPT09N50D Specs and Replacement


   Type Designator: GPT09N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 27.2 nS
   Cossⓘ - Output Capacitance: 107.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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GPT09N50D datasheet

 6.1. Size:292K  champion
 gpt09n50-d-g.pdf pdf_icon

GPT09N50D

GPT09N50 GPT09N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is des... See More ⇒

Detailed specifications: BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , AOD4184A , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 .

Keywords - GPT09N50D MOSFET specs

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