GPT09N50D Datasheet and Replacement
Type Designator: GPT09N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 107.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
GPT09N50D Datasheet (PDF)
gpt09n50-d-g.pdf

GPT09N50 GPT09N50DPOWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is des
Datasheet: BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , HY1906P , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 .
History: HYG060N08NS1P | HM50P03
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History: HYG060N08NS1P | HM50P03



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