GPT09N50D Datasheet and Replacement
Type Designator: GPT09N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 107.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
GPT09N50D Datasheet (PDF)
gpt09n50-d-g.pdf

GPT09N50 GPT09N50DPOWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is des
Datasheet: BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , HY1906P , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 .
History: HYG060N08NS1P | PJZ9NA90 | NCE30P25Q
Keywords - GPT09N50D MOSFET datasheet
GPT09N50D cross reference
GPT09N50D equivalent finder
GPT09N50D lookup
GPT09N50D substitution
GPT09N50D replacement
History: HYG060N08NS1P | PJZ9NA90 | NCE30P25Q



LIST
Last Update
MOSFET: JMTE6888A | JMTE3003A | JMTE3002B | JMTE068N07A | JMTE060N06A | JMTE035N06D | JMTE035N04A | JMTE025N04D | JMTE018N03A | JMTD3134K | JMTD2N7002KS | JMSL1509PG | JMSL10A13P | JMSL10A13L | JMSL10A13K | JMSL1010PU
Popular searches
2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent