GPT09N50D Datasheet. Specs and Replacement

Type Designator: GPT09N50D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.2 nS

Cossⓘ - Output Capacitance: 107.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

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GPT09N50D datasheet

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GPT09N50D

GPT09N50 GPT09N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is des... See More ⇒

Detailed specifications: BUZ48, CEP6030L, CEB6030L, ECX10N20, FHP1906A, FIR5N60FG, FNK30H150, GPT09N50, 75N75, HY1707P, HY1707M, HY1707B, HY1707I, HY1707MF, HY1707PS, HY1707PM, LTP70N06

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