HY1707I Datasheet. Specs and Replacement

Type Designator: HY1707I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO262

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HY1707I datasheet

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HY1707I

HY1707P/M/B/I/MF/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features 70V/80A, RDS(ON)= 6m (typ.) @ VGS=10V S Avalanche Rated D S D G G S Reliable and Rugged S D D G G TO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D S D G G Applications TO-3PS-3L TO-3PS-3M TO-220MF-3L D Power Man... See More ⇒

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HY1707I

HY1708MF-VB www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any er... See More ⇒

Detailed specifications: FHP1906A, FIR5N60FG, FNK30H150, GPT09N50, GPT09N50D, HY1707P, HY1707M, HY1707B, 2SK2842, HY1707MF, HY1707PS, HY1707PM, LTP70N06, ME7170-G, TP0610T, WML07N65C2, WMM07N65C2

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