WMG07N65C2 Datasheet. Specs and Replacement
Type Designator: WMG07N65C2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.14 Ohm
Package: TO-251S3
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WMG07N65C2 substitution
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WMG07N65C2 datasheet
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WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25... See More ⇒
Detailed specifications: HY1707PM, LTP70N06, ME7170-G, TP0610T, WML07N65C2, WMM07N65C2, WMO07N65C2, WMP07N65C2, IRFB4110, WMH07N65C2, 3N155, 3N156, 3N172, 3N173, 3N188, 3N189, 3N60AF
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