All MOSFET. AMA930N Datasheet

 

AMA930N Datasheet and Replacement


   Type Designator: AMA930N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: DFN2X2-6
 

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AMA930N Datasheet (PDF)

 ..1. Size:367K  analog power
 ama930n.pdf pdf_icon

AMA930N

Analog Power AMA930NDual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)63 @ VGS = 4.5V4.4 Low thermal impedance30110 @ VGS = 2.5V3.4 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM R

 9.1. Size:305K  analog power
 ama931pe.pdf pdf_icon

AMA930N

Analog Power AMA931PEDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)220 @ VGS = -4.5V -2.2 Low thermal impedance -30300 @ VGS = -2.5V -1.9 Fast switching speed DFN2x2-6L Typical Applications: Load switches Bottom View Low power buck/boost converters Power routing in batt

Datasheet: AMA440N , AMA450N , AMA460N , AMA461P , AMA520C , AMA920N , AMA921P , AMA922N , IRF640 , AMA931PE , AMA960N , AMB430N , AMCC431P , AMCC530C , AMCC920NE , AMCC921PE , AMCC922NE .

History: RFD7N10LESM | STB40NS15T4 | ME50N10-G | IXFL44N100P | CHM6503GP | FIR13N50FG | STB10N65K3

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