IPD200N15N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD200N15N3
Marking Code: 200N15N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 214 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO-252
IPD200N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD200N15N3 Datasheet (PDF)
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf
IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t
ipd200n15n3.pdf
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3FEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: SMP730 | NCE1579C | MDD2601 | 2SK815 | MEE7816S-G | MEE7816AS-G | MEE7636-G | MEE7630-G | MEE7298-G | MEE7296-G | MEE72962-G | MEE7292-G | MEE6240T | MEE4298T | MEE4298K-G | MEE4298HT