IPD200N15N3 Datasheet. Specs and Replacement

Type Designator: IPD200N15N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 214 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

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IPD200N15N3 substitution

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IPD200N15N3 datasheet

 ..1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPD200N15N3

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t... See More ⇒

 ..2. Size:242K  inchange semiconductor
 ipd200n15n3.pdf pdf_icon

IPD200N15N3

isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150... See More ⇒

Detailed specifications: IPD088N06N3, IPD096N08N3, IPD110N12N3, IPD122N10N3, IPD127N06L, IPD135N08N3, IPD16CN10N, IPD180N10N3, 8N65, IPD220N06L3, IPD25CN10N, IPD320N20N3, IPD33CN10N, IPD350N06L, IPD400N06N, IPD530N15N3, IPD600N25N3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.