MDP1723 Datasheet. Specs and Replacement

Type Designator: MDP1723  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.7 nS

Cossⓘ - Output Capacitance: 1830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO-220

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MDP1723 datasheet

 ..1. Size:245K  inchange semiconductor
 mdp1723.pdf pdf_icon

MDP1723

isc N-Channel MOSFET Transistor MDP1723 FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒

 0.1. Size:1119K  magnachip
 mdp1723th.pdf pdf_icon

MDP1723

MDP1723 Single N-channel Trench MOSFET 40V, 120A, 2.3m General Description Features The MDP1723 uses advanced MagnaChip s MOSFET V = 40V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1723 is suitable device for Synchronous ... See More ⇒

Detailed specifications: IRFR7746, IRFR812, IRFR825TR, IRFR8314, IRFS3307ZTRL, IRFS7534TRLPBF, ISTP16NF06, MDF18N50, 7N60, MDP1922, P50NF06, SCT3060AL, SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2, SUD70090E, 2N3380

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