All MOSFET. MDP1723 Datasheet


MDP1723 MOSFET. Datasheet pdf. Equivalent

Type Designator: MDP1723

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 138.9 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0023 Ohm

Package: TO-220C

MDP1723 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDP1723 Datasheet (PDF)

1.1. mdp1723.pdf Size:245K _inchange_semiconductor


isc N-Channel MOSFET Transistor MDP1723 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS

1.2. mdp1723th.pdf Size:1119K _magnachip


 MDP1723 Single N-channel Trench MOSFET 40V, 120A, 2.3mΩ General Description Features The MDP1723 uses advanced MagnaChip’s MOSFET  V = 40V DS Technology, which provides high performance in on-state  I = 120A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDP1723 is suitable device for Synchronous < 2.3 mΩ @V = 10V


Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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