MDP1723 Specs and Replacement
Type Designator: MDP1723
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 138.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.7 nS
Cossⓘ - Output Capacitance: 1830 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO-220
MDP1723 substitution
MDP1723 datasheet
mdp1723.pdf
isc N-Channel MOSFET Transistor MDP1723 FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
mdp1723th.pdf
MDP1723 Single N-channel Trench MOSFET 40V, 120A, 2.3m General Description Features The MDP1723 uses advanced MagnaChip s MOSFET V = 40V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1723 is suitable device for Synchronous ... See More ⇒
Detailed specifications: IRFR7746 , IRFR812 , IRFR825TR , IRFR8314 , IRFS3307ZTRL , IRFS7534TRLPBF , ISTP16NF06 , MDF18N50 , 7N60 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , SPD30N03S2L , SPD50N03S2 , SUD70090E , 2N3380 .
Keywords - MDP1723 MOSFET specs
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