SCT3060 MOSFET. Datasheet pdf. Equivalent
Type Designator: SCT3060
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 165 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 22 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.6 V
Maximum Drain Current |Id|: 39 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm
Package: TO-247
SCT3060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SCT3060 Datasheet (PDF)
1.1. sct3060.pdf 
Size:242K _inchange_semiconductor
isc N-Channel SiC SMOSFET Transistor SCT3060 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC converters ·Switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
