SCT3060AL Datasheet. Specs and Replacement

Type Designator: SCT3060AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO-247N

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SCT3060AL datasheet

 ..1. Size:1018K  rohm
 sct3060al.pdf pdf_icon

SCT3060AL

SCT3060AL N-channel SiC power MOSFET Data Sheet lOutline TO-247N VDSS 650V RDS(on) (Typ.) 60mW ID 39A (3) PD 165W (2) (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating... See More ⇒

 6.1. Size:1202K  rohm
 sct3060ar.pdf pdf_icon

SCT3060AL

SCT3060AR N-channel SiC power MOSFET Datasheet lOutline TO-247-4L VDSS 650V RDS(on) (Typ.) 60m 39A ID*1 PD 165W (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) P... See More ⇒

 7.1. Size:242K  inchange semiconductor
 sct3060.pdf pdf_icon

SCT3060AL

isc N-Channel SiC SMOSFET Transistor SCT3060 FEATURES Static drain-source on-resistance RDS(on) 78m Fast switching speed Fast reverse recovery 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC/DC converters Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

 9.1. Size:903K  rohm
 sct3080kl.pdf pdf_icon

SCT3060AL

SCT3080KL N-channel SiC power MOSFET Datasheet Outline TO-247N VDSS 1200V RDS(on) (Typ.) 80m ID 31A (3) PD 165W (2) (1) Inner circuit (2) Features (1) Gate (2) Drain 1) Low on-resistance (3) Source *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tube... See More ⇒

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Detailed specifications: IRFR8314, IRFS3307ZTRL, IRFS7534TRLPBF, ISTP16NF06, MDF18N50, MDP1723, MDP1922, P50NF06, FTP08N06A, SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2, SUD70090E, 2N3380, 2N3382, 2N3384, 2N3386

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