All MOSFET. SCT3060 Datasheet


SCT3060 MOSFET. Datasheet pdf. Equivalent

Type Designator: SCT3060

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 165 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 22 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.6 V

Maximum Drain Current |Id|: 39 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm

Package: TO-247

SCT3060 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SCT3060 Datasheet (PDF)

1.1. sct3060.pdf Size:242K _inchange_semiconductor


isc N-Channel SiC SMOSFET Transistor SCT3060 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC converters ·Switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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