2N6896 Specs and Replacement
Type Designator: 2N6896
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-204AA
2N6896 substitution
- MOSFET ⓘ Cross-Reference Search
2N6896 datasheet
2n6896.pdf
2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power Features MOSFET -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate rDS(ON) = 0.600 power MOS field effect transistor designed for high-speed SOA is Power Dissipation Limited applications such as switching regulators, switching converters, relay drivers, and drivers for high power b... See More ⇒
Detailed specifications: 2N5115UB , 2N5115UBE3 , 2N5116E3 , 2N5116UB , 2N5116UBE3 , 2N5163 , 2N6849HP , 2N6849U , AON7408 , 2N6898 , 2N7000CSM , 2N7000G , 2N7000RLRA , 2N7000RLRAG , 2N7000RLRMG , 2N7000RLRPG , 2N7002-7 .
History: HY4306W
Keywords - 2N6896 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: HY4306W
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