All MOSFET. 2N6896 Datasheet

 

2N6896 Datasheet and Replacement


   Type Designator: 2N6896
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-204AA
 

 2N6896 substitution

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2N6896 Datasheet (PDF)

 ..1. Size:75K  fairchild semi
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2N6896

2N6896Data Sheet December 2001-6A, -100V, 0.600 Ohm, P-Channel Power FeaturesMOSFET -6A, -100VThe 2N6896 is a P-Channel enhancement mode silicon gate rDS(ON) = 0.600power MOS field effect transistor designed for high-speed SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, relay drivers, and drivers for high power b

 9.1. Size:106K  njs
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2N6896

Datasheet: 2N5115UB , 2N5115UBE3 , 2N5116E3 , 2N5116UB , 2N5116UBE3 , 2N5163 , 2N6849HP , 2N6849U , IRLZ44N , 2N6898 , 2N7000CSM , 2N7000G , 2N7000RLRA , 2N7000RLRAG , 2N7000RLRMG , 2N7000RLRPG , 2N7002-7 .

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