All MOSFET. 2N6896 Datasheet

 

2N6896 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N6896
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-204AA

 2N6896 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6896 Datasheet (PDF)

 ..1. Size:75K  fairchild semi
 2n6896.pdf

2N6896 2N6896

2N6896Data Sheet December 2001-6A, -100V, 0.600 Ohm, P-Channel Power FeaturesMOSFET -6A, -100VThe 2N6896 is a P-Channel enhancement mode silicon gate rDS(ON) = 0.600power MOS field effect transistor designed for high-speed SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, relay drivers, and drivers for high power b

 9.1. Size:106K  njs
 2n6898.pdf

2N6896 2N6896

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TMP9N60

 

 
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