All MOSFET. HY3810P Datasheet

 

HY3810P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3810P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 346 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1013 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220

 HY3810P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3810P Datasheet (PDF)

 ..1. Size:971K  hymexa
 hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf

HY3810P HY3810P

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application

 8.1. Size:971K  hymexa
 hy3810.pdf

HY3810P HY3810P

HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SML40C15N

 

 
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