HY3810P Datasheet and Replacement
Type Designator: HY3810P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 346 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 185 nC
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1013 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
HY3810P substitution
HY3810P Datasheet (PDF)
hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf
HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
hy3810.pdf
HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Keywords - HY3810P MOSFET datasheet
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