BLV640 Datasheet and Replacement
Type Designator: BLV640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 35.7 nC
tr ⓘ - Rise Time: 132 nS
Cossⓘ - Output Capacitance: 159 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
BLV640 substitution
BLV640 Datasheet (PDF)
..1. Size:433K belling
blv640.pdf
blv640.pdf
BLV640 N-channel Enhancement Mode Power MOSFET 200V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.18 Simple Drive Requirements ID 18ADescription This advanced low voltage MOSFET is produced using Bellings proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless
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