BLV640 Datasheet. Specs and Replacement

Type Designator: BLV640  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220

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BLV640 datasheet

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BLV640

BLV640 N-channel Enhancement Mode Power MOSFET 200V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.18 Simple Drive Requirements ID 18A Description This advanced low voltage MOSFET is produced using Belling s proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless ... See More ⇒

Detailed specifications: TPC8228H, SUP60N06-18, SUB60N06-18, BLV108, BLV1N60, BLV1N60A, BLV2N60, BLV4N60, AO3407, BLV6N60, BLV730, BLV740, BLV7N60, BLV830, BLV840, BLVP304, BS107

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