BLV640 PDF and Equivalents Search

 

BLV640 Specs and Replacement

Type Designator: BLV640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 159 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220

BLV640 substitution

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BLV640 datasheet

 ..1. Size:433K  belling
 blv640.pdf pdf_icon

BLV640

BLV640 N-channel Enhancement Mode Power MOSFET 200V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.18 Simple Drive Requirements ID 18A Description This advanced low voltage MOSFET is produced using Belling s proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless ... See More ⇒

Detailed specifications: TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , 2N60 , BLV6N60 , BLV730 , BLV740 , BLV7N60 , BLV830 , BLV840 , BLVP304 , BS107 .

History: AP3401MI

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