All MOSFET. BSL606SN Datasheet

 

BSL606SN Datasheet and Replacement


   Type Designator: BSL606SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-457
 

 BSL606SN substitution

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BSL606SN Datasheet (PDF)

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BSL606SN

BSL606SNOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 95 Logic level (4.5V rated)ID 4.5 A Avalanche rated Qualified according to AEC Q101PG-TSOP-6 100%lead-free; Halogen-free; RoHS compliant6 5 4 1 2 3 Type Package Tape and Reel Info Marking Hal

Datasheet: BSL214N , BSL215C , BSL302SN , BSL303SPE , BSL305SPE , BSL306N , BSL308C , BSL316C , IRF1010E , BSL802SN , BSL806N , BSN20-7 , BSN20BK , BSO200P03S , BSO201SP , BSO203P , BSO203SP .

History: JMSH1004RG

Keywords - BSL606SN MOSFET datasheet

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