BSL606SN Datasheet and Replacement
Type Designator: BSL606SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-457
BSL606SN substitution
BSL606SN Datasheet (PDF)
bsl606sn.pdf
BSL606SNOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 95 Logic level (4.5V rated)ID 4.5 A Avalanche rated Qualified according to AEC Q101PG-TSOP-6 100%lead-free; Halogen-free; RoHS compliant6 5 4 1 2 3 Type Package Tape and Reel Info Marking Hal
Datasheet: BSL214N , BSL215C , BSL302SN , BSL303SPE , BSL305SPE , BSL306N , BSL308C , BSL316C , K4145 , BSL802SN , BSL806N , BSN20-7 , BSN20BK , BSO200P03S , BSO201SP , BSO203P , BSO203SP .
History: CS1N65B1
Keywords - BSL606SN MOSFET datasheet
BSL606SN cross reference
BSL606SN equivalent finder
BSL606SN lookup
BSL606SN substitution
BSL606SN replacement
History: CS1N65B1
LIST
Last Update
MOSFET: APJ10N65P | APJ10N65T | APJ10N65F | AP65R950 | APJ10N65D | APG80N10T | APG80N10P | APG80N10NF | APG60N10T | APG60N10P | AP100P02NF | AP100N08D | AP100N04NF | AP100N04D | AP100N03Y | AP100N03T
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
irfp140 | ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet | 2n2222 data sheet | irf3205 datasheet | oc71