BSL606SN Datasheet. Specs and Replacement

Type Designator: BSL606SN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-457

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BSL606SN datasheet

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BSL606SN

BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS 60 V N-channel RDS(on),max VGS=10 V 60 mW Enhancement mode VGS=4.5 V 95 Logic level (4.5V rated) ID 4.5 A Avalanche rated Qualified according to AEC Q101 PG-TSOP-6 100%lead-free; Halogen-free; RoHS compliant 6 5 4 1 2 3 Type Package Tape and Reel Info Marking Hal... See More ⇒

Detailed specifications: BSL214N, BSL215C, BSL302SN, BSL303SPE, BSL305SPE, BSL306N, BSL308C, BSL316C, IRF1010E, BSL802SN, BSL806N, BSN20-7, BSN20BK, BSO200P03S, BSO201SP, BSO203P, BSO203SP

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