BSP149 Datasheet and Replacement
Type Designator: BSP149
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: SOT-223
BSP149 substitution
BSP149 Datasheet (PDF)
bsp149.pdf

BSP149SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 200 V N-channelRDS(on),max 3.5 W Depletion modeIDSS,min 0.14 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead plating; RoHS compliantPG-SOT223 Qualified according to AEC Q101Type Package Tape and Reel Information Marking Packaging Type Package Tape and Re
bsp145.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP145N-channel enhancement modevertical D-MOS transistor1995 Apr 24Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel enhancement modeBSP145vertical D-MOS transistorFEATURES Direct interface to C-MOS, TTL, etc. High speed switching d4ha
Datasheet: BSO303P , BSO303SP , BSO612CVG , BSO615CG , BSP123 , BSP125 , BSP129 , BSP135 , 18N50 , BSP254A , BSP295 , BSP296 , BSP296N , BSP297 , BSP298 , BSP299 , BSP300 .
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