BSP149 Datasheet. Specs and Replacement

Type Designator: BSP149  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT-223

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BSP149 datasheet

 ..1. Size:381K  infineon
bsp149.pdf pdf_icon

BSP149

BSP149 SIPMOS Small-Signal-Transistor Product Summary Features VDS 200 V N-channel RDS(on),max 3.5 W Depletion mode IDSS,min 0.14 A dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating; RoHS compliant PG-SOT223 Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Packaging Type Package Tape and Re... See More ⇒

 9.1. Size:51K  philips
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BSP149

DISCRETE SEMICONDUCTORS DATA SHEET BSP145 N-channel enhancement mode vertical D-MOS transistor 1995 Apr 24 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel enhancement mode BSP145 vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High speed switching d 4 ha... See More ⇒

Detailed specifications: BSO303P, BSO303SP, BSO612CVG, BSO615CG, BSP123, BSP125, BSP129, BSP135, AON7410, BSP254A, BSP295, BSP296, BSP296N, BSP297, BSP298, BSP299, BSP300

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