BSP149 Datasheet. Specs and Replacement
Type Designator: BSP149 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: SOT-223
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BSP149 datasheet
bsp149.pdf
BSP149 SIPMOS Small-Signal-Transistor Product Summary Features VDS 200 V N-channel RDS(on),max 3.5 W Depletion mode IDSS,min 0.14 A dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating; RoHS compliant PG-SOT223 Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Packaging Type Package Tape and Re... See More ⇒
bsp145.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP145 N-channel enhancement mode vertical D-MOS transistor 1995 Apr 24 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel enhancement mode BSP145 vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High speed switching d 4 ha... See More ⇒
Detailed specifications: BSO303P, BSO303SP, BSO612CVG, BSO615CG, BSP123, BSP125, BSP129, BSP135, AON7410, BSP254A, BSP295, BSP296, BSP296N, BSP297, BSP298, BSP299, BSP300
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