All MOSFET. BSP149 Datasheet

 

BSP149 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSP149
   Marking Code: BSP149
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT-223

 BSP149 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSP149 Datasheet (PDF)

 ..1. Size:381K  infineon
 bsp149.pdf

BSP149 BSP149

BSP149SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 200 V N-channelRDS(on),max 3.5 W Depletion modeIDSS,min 0.14 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead plating; RoHS compliantPG-SOT223 Qualified according to AEC Q101Type Package Tape and Reel Information Marking Packaging Type Package Tape and Re

 9.1. Size:51K  philips
 bsp145.pdf

BSP149 BSP149

DISCRETE SEMICONDUCTORSDATA SHEETBSP145N-channel enhancement modevertical D-MOS transistor1995 Apr 24Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel enhancement modeBSP145vertical D-MOS transistorFEATURES Direct interface to C-MOS, TTL, etc. High speed switching d4ha

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