BSP716N Datasheet. Specs and Replacement
Type Designator: BSP716N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT-223
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BSP716N datasheet
bsp716n.pdf
BSP716N OptiMOS Small-Signal-Transistor Product Summary Features VDS 75 V N-channel RDS(on),max VGS=10 V 0.16 W Enhancement mode VGS=4.5 V 0.18 Logic Level (4.5V rated) ID 2.3 A Avalanche rated Qualified according to AEC Q101 PG-SOT223 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 75.2 Type Package Tape and Reel M... See More ⇒
Detailed specifications: BSP304A, BSP318S, BSP320S, BSP324, BSP372, BSP372N, BSP373, BSP373N, K4145, BSP88, BSP89L6327, BSR606N, BSS119L6327, BSS119N, BSS123D87Z, BSS123-7, BSS123-7-F
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