All MOSFET. BSP716N Datasheet

 

BSP716N Datasheet and Replacement


   Type Designator: BSP716N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-223
 

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BSP716N Datasheet (PDF)

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BSP716N

BSP716NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 75 V N-channelRDS(on),max VGS=10 V 0.16 W Enhancement modeVGS=4.5 V 0.18 Logic Level (4.5V rated)ID 2.3 A Avalanche rated Qualified according to AEC Q101PG-SOT223 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-2175.2 Type Package Tape and Reel M

Datasheet: BSP304A , BSP318S , BSP320S , BSP324 , BSP372 , BSP372N , BSP373 , BSP373N , NCEP15T14 , BSP88 , BSP89L6327 , BSR606N , BSS119L6327 , BSS119N , BSS123D87Z , BSS123-7 , BSS123-7-F .

History: P062ABDF

Keywords - BSP716N MOSFET datasheet

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