All MOSFET. GP2M005A050XG Datasheet

 

GP2M005A050XG MOSFET. Datasheet pdf. Equivalent

Type Designator: GP2M005A050XG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 98.4 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 78 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-252, TO-251

GP2M005A050XG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M005A050XG Datasheet (PDF)

0.1. gp2m005a050xg.pdf Size:500K _globalpower

GP2M005A050XG
GP2M005A050XG

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 4.5A < 1.5W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A050CG D-PAK GP2M005A050CG RoHS GP2M005A050PG I-PAK G

2.1. gp2m005a050xx.pdf Size:366K _globalpower

GP2M005A050XG
GP2M005A050XG

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 4.5A <1.5  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M005A050HG TO-220 GP2M005A050HG RoHS GP2M005A050FG TO-220F GP2M005A050FG RoHS Absolute

 5.1. gp2m005a060xxx.pdf Size:507K _globalpower

GP2M005A050XG
GP2M005A050XG

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A060CG D-PAK GP2M005A060CG RoHS GP2M005A060PG/GP2M00

5.2. gp2m005a060xg.pdf Size:410K _globalpower

GP2M005A050XG
GP2M005A050XG

GP2M005A060HG GP2M005A060FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M005A060HG TO-220 GP2M005A060HG RoHS GP2M005A060FG TO-220F GP2M005A060FG RoHS Absolu

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